Light detection device and electronic apparatus

Abstract

Provided is a light detection device capable of suppressing degradation of signal charge transfer characteristics. The light detection device includes: a semiconductor layer with one surface serving as an element formation surface and the other surface serving as a light incident surface, the semiconductor layer having a plurality of cell regions arranged in a matrix along row and column directions as viewed from above; a photoelectric conversion unit configured in each of the cell regions; and a trench isolation structure that extends along a thickness direction of the semiconductor layer and serves as a partition between the cell regions, the trench isolation structure includes a conductive wall including a conductive material, and an isolation insulating film that is provided on a side surface of the conductive wall and insulates the conductive wall from the semiconductor layer, and a film thickness of a portion of the isolation insulating film near the light incident surface is less than a film thickness of a portion near the element formation surface.

Dependencies are inferred from the claim text.