US 2026/0314098 A1 · SEMICONDUCTOR IMAGE-SENSING STRUCTURE

Abstract

An image sensor device includes a semiconductor substrate having a front-side surface and a backside surface opposite to the front-side surface, a logic device disposed over the front-side surface of the semiconductor substrate, a photo-sensing element disposed in the semiconductor substrate, an interconnect structure disposed over the front-side surface of the semiconductor substrate, and an EO modulator disposed over the backside surface of the semiconductor substrate. The EO modulator includes a first electrode, a second electrode over the first electrode, and a micro-lens disposed between the first electrode and the second electrode. The logic device is disposed between the interconnect structure and the photo-sensing element in a direction perpendicular to the front-side surface of the semiconductor substrate.

Claims20

Dependent claims

A semiconductor image-sensing structure, comprising:

a semiconductor substrate having a front-side surface and a backside surface opposite to the front-side surface;
a logic device disposed over the front-side surface of the semiconductor substrate;
a photo-sensing element disposed in the semiconductor substrate;
an interconnect structure disposed over the front-side surface of the semiconductor substrate;
and
an electro-optical modulator disposed over the backside surface of the semiconductor substrate, wherein the electro-optical modulator comprises:
a first electrode;
a second electrode over the first electrode;
and
a micro-lens between the first electrode and the second electrode,
wherein the logic device is disposed between the interconnect structure and the photo-sensing element in a direction perpendicular to the front-side surface of the semiconductor substrate.

8 more elements

Dependencies are inferred from the claim text.

Semiconductor image-sensing structure

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Semiconductor image-sensing structure

Life of this patent

Abstract

Claims20