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US 2026/0314097 A1Published application
Image sensing device
AssigneeSK hynix Inc.
InventorWoo Yung JUNG
Life of this patent
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Abstract
Image sensing devices are disclosed. In an embodiment, an image sensing device includes an active pixel region; and a peripheral region. The peripheral region is disposed adjacent to at least one side of the active pixel region, and includes a light-scattering suppression layer, a first base layer spaced apart from the light-scattering suppression layer, and a second base layer covering at least a portion of each of the light-scattering suppression layer and the first base layer.
Claims20
An image sensing device comprising:
- an active pixel region including a photoelectric conversion region configured to convert incident light into electrical signals;
- and
- a peripheral region disposed adjacent to at least one side of the active pixel region, and including a light scattering suppression layer that reduces scattering of light, a first base layer spaced apart from the light scattering suppression layer, and a second base layer covering at least a portion of each of the light scattering suppression layer and the first base layer.
An image sensing device comprising:
- an active pixel region including a first portion of a semiconductor layer that includes a photoelectric conversion region configured to convert incident light into electrical signals;
- and
- a peripheral region disposed adjacent to the active pixel region, and including a light scattering suppression layer disposed on a second portion of the semiconductor layer extending from the first portion of the semiconductor layer and a base layer covering at least a portion of the light scattering suppression layer,
- wherein
- the base layer includes a groove portion recessed toward a top surface of the semiconductor layer.
2 more elements
An image sensing device comprising:
- a semiconductor layer including a photoelectric conversion region;
- a light scattering suppression layer disposed on the semiconductor layer;
- a first base layer disposed on the semiconductor layer and spaced apart from the light scattering suppression layer;
- and
- a second base layer configured to cover the light scattering suppression layer and the first base layer,
- wherein the second base layer includes:
- a first region formed to overlap the light scattering suppression layer in plan view;
- a second region formed to overlap the first base layer in plan view;
- and
- a third region disposed between the first region and the second region,
- wherein
- the third region has a top surface recessed into the semiconductor layer.
9 more elements
Dependencies are inferred from the claim text.