Image sensor
AssigneesSamsung Electronics Co., Ltd., Postech Research and Business Development Foundation
InventorsSungbong PARK, Chang-Ki BAEK, Jaekyu LEE, Ki Yeong KIM
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Abstract
An image sensor according to an embodiment may include a substrate comprising a photoelectric conversion area; and a source follower transistor on one side of the substrate, wherein the source follower transistor may include a source area, a channel area, and a drain area on the substrate. The source area may be doped a first conductivity type. The channel area and the drain area may be doped a second conductivity type. The second conductivity type may be different from the first conductivity type.
Claims20
An image sensor comprising:
- a substrate comprising a photoelectric conversion area;
- and
- a source follower transistor on one side of the substrate, wherein
- the source follower transistor comprises a source area, a channel area, and a drain area on the substrate,
- the source area is doped a first conductivity type,
- the channel area and the drain area are doped a second conductivity type, and
- the second conductivity type is different from the first conductivity type.
An image sensor comprising:
- a first substrate comprising a photoelectric conversion area, wherein a first surface of the first substrate is opposite a second surface of the first substrate;
- a transfer transistor and a floating diffusion region on the first surface of the first substrate;
- a second substrate, wherein a first surface of the second substrate is opposite and a second surface of the second substrate;
- and
- a plurality of transistors on the first surface of the second substrate and connected to the transfer transistor,
- wherein the plurality of transistors on the second substrate each comprise a reset transistor configured to initialize the floating diffusion region, a source follower transistor having a gate connected to the floating diffusion region, and a selection transistor connected to one end of the source follower transistor, and
- wherein the source follower transistor comprises a source area, a channel area, and a drain area on the second substrate,
- wherein the source follower transistor further includes a gate electrode overlapping the channel area,
- the source area is doped a first conductivity type,
- the channel area and the drain area are doped a second conductivity type, and
- the second conductivity type is different from the first conductivity type.
An image sensor comprising:
- a substrate comprising a photoelectric conversion area;
- a transfer transistor connected to the photoelectric conversion area;
- a floating diffusion region connected to the transfer transistor;
- a source follower transistor having a gate connected to the floating diffusion region;
- a reset transistor configured to initialize the floating diffusion region;
- and
- a selection transistor connected to one end of the source follower transistor, wherein
- the source follower transistor comprises a source area, a channel area, and a drain area on the substrate,
- the source area is doped a first conductivity type,
- the channel area and the drain area are doped a second conductivity type, and
- the second conductivity type is different from the first conductivity type.
Dependencies are inferred from the claim text.