Integrated circuit device and manufacturing method thereof

A method for manufacturing an integrated circuit device, comprising:

• forming a transistor comprising a gate structure over a front side of a substrate;
• forming, over the front side, a front-side metallization pattern comprising a conductive path electrically connected to the gate structure, and a dummy conductive pattern electrically coupled to the conductive path and electrically isolated from signal and power paths of the front-side metallization pattern other than the conductive path;
• and
• after forming the front-side metallization pattern, performing a plasma process from a back side of the transistor,
• wherein during the plasma process, the dummy conductive pattern receives charges induced by the plasma process.

A method for manufacturing an integrated circuit device, comprising:

• forming a transistor comprising a gate structure and source/drain epitaxial structures over a substrate;
• forming a gate contact via over the gate structure;
• forming a front-side metallization pattern comprising a plurality of metallization layers and metallization vias, the front-side metallization pattern including a conductive path electrically connected to the gate contact via and a dummy conductive pattern electrically coupled to the conductive path, the dummy conductive pattern comprising dummy conductive lines in at least two different ones of the metallization layers connected to one another by at least one metallization via;
• bonding the front-side metallization pattern to a carrier substrate and exposing a back side of the transistor;
• and
• forming a back-side metallization structure over the back side using a plasma etching process, the dummy conductive pattern serving as a charge pool to receive charges during the plasma etching process.