US 2026/0313267 A1 · SOLID-STATE IMAGING ELEMENT

Abstract

There is provided a solid-state imaging element capable of performing AD conversion on pixel signals in a wide dynamic range in a short time. A solid-state imaging device according to the present disclosure includes: a pixel section including photoelectric conversion elements that photoelectrically convert incident light into pixel signals; an AD conversion section that converts the pixel signals from the pixel section into digital signals; a first holding circuit that is provided between the pixel section and the AD conversion section and holds the pixel signals; a second holding circuit that is provided between the pixel section and the AD conversion section and holds the pixel signals; and a selection circuit that is capable of connecting any one of the first and second holding circuits to the AD conversion section and selectively transmits the pixel signals held in the first or second holding circuit to the AD conversion section.

Claims17

Dependent claims

(canceled)

A solid-state imaging device comprising:

a pixel circuit including photoelectric conversion elements that photoelectrically convert incident light into pixel signals;
an AD conversion circuit that converts the pixel signals from the pixel circuit into digital signals;
a holding circuit that holds the pixel signals;
and
a selection circuit configured to selectively connect the pixel circuit and the holding circuit to the AD conversion circuit,
wherein the holding circuit comprises a first amplification transistor, and
the pixel circuit further comprises:
a first transfer gate;
a floating diffusion coupled to the pixel circuit via the first transfer gate;
a second transfer gate;
and
a second amplification transistor including a first end coupled to the floating diffusion and a second end that outputs the pixel signals,
wherein the second end of the second amplification transistor is coupled to the first amplification transistor.

10 more elements

Dependencies are inferred from the claim text.

Facts

Application

19/178,680Filed 14 Apr 2025

Priority

JP 2021-0191269 Feb 2021

Published

8 Oct 2026

Term ends

Not estimatedThe source records don’t support an estimate.

Classification5 codes

H04N 25/78
Addressed sensors, e.g. MOS or CMOS sensors: readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
H04N 25/40
Circuitry of solid-state image sensors [SSIS]; Control thereof: extracting pixel data from image sensors by controlling scanning circuits, e.g. by…
H04N 25/57
Control of the SSIS exposure: control of the dynamic range
H04N 25/59
Control of the dynamic range: by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the…

Solid-state imaging element

Life of this patent

Solid-state imaging element

Life of this patent

Abstract

Claims17