Plasma processing apparatus, power source system, and plasma processing method

A power source system used in a plasma processing apparatus including a plasma processing chamber and a substrate support, the power source system comprising:

• an RF power source configured to:
• supply pulsed RF power to the plasma processing chamber and/or the substrate support, and
• form plasma from a processing gas, and
• a circuitry configured to control the supply of the pulsed RF power by controlling the RF power source such that an increasing function of a power level from a supply starting point of the pulsed RF power to a peak appearing point is a downward convex function, and/or the decreasing function of a power level from a peak ending point of the pulsed RF power to a supply ending point is a downward convex function.

A plasma processing method performed by a plasma processing apparatus,

• the plasma processing apparatus including:
• a plasma processing chamber,
• a substrate support provided in the plasma processing chamber, the substrate support configured to receive a substrate,
• a gas supply configured to supply a processing gas to the plasma processing chamber, and
• an RF power source configured to:
• supply pulsed RF power to the plasma processing chamber and/or the substrate support, and
• form plasma from the processing gas,
• the plasma processing method comprising:
• preparing the substrate on the substrate support and processing the substrate using the plasma formed from the processing gas, and
• controlling the RF power source such that an increasing function of a power level from a supply starting point of the pulsed RF power to a peak appearing point is a downward convex function, and/or a decreasing function of the power level from a peak ending point of the pulsed RF power to a supply ending point is a downward convex function.