Memory device and semiconductor device using high-level voltage

A semiconductor device comprising:

• a switching unit configured to determine whether to transfer a high-level voltage having a higher level at least three times greater than a power supply voltage;
• a control device configured to generate, for controlling the switching unit, a control signal transitioning between a first voltage level and a second voltage level;
• and
• a first switch configured to transfer, to the control device, a first low voltage level as the second voltage level in response to a first selection control signal, the first low voltage level being greater than a ground voltage level and less than a level of the high-level voltage.

A non-volatile memory device comprising:

• a plurality of memory cells configured to store data;
• a word line coupled to the plurality of memory cells;
• a voltage generator configured to generate at least one of a pass voltage, a program voltage, and an erase voltage, each of which has a level at least three times higher or greater than a power supply voltage;
• a switching unit configured to determine whether to transfer the at least one of the pass voltage, the program voltage, and the erase voltage to the word line;
• and
• a control element configured to generate a control signal transitioning between a first voltage level and a second voltage level to control the switching unit,
• wherein the first voltage level is equal to a level of the power supply voltage, and
• wherein the second voltage level is greater than 0 V and less than 10% of a level of the high-level voltage.