Dynamic error correction protection with rain protection for memory system
AssigneeMicron Technology, Inc.
InventorPhong Sy Nguyen
Life of this patent
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Abstract
Various example embodiments provide for dynamic error correction with redundant array of independent NAND-type memory devices (RAIN) protection for a memory system, such as a memory sub-system. In particular, various example embodiments provide one or more different solutions for implementing concurrent use of dynamic exclusively OR (dynamicXOR) protection and RAIN protection on a memory device while avoiding the challenges/conflicts suffered by conventional memory systems.
Claims20
A system comprising:
- a memory device;
- and
- a processing device, operatively coupled to the memory device, configured to perform operations comprising:
- storing host data across non-parity codewords of a select wordline across a plurality of planes of the memory device;
- for an individual plane of the plurality of planes:
- generating select dynamic exclusively OR (dynamicXOR) parity data for a portion of the host data stored across non-parity codewords in the select wordline on the individual plane;
- and
- storing the select dynamicXOR parity data in a dynamicXOR parity codeword of the select wordline on the individual plane;
- generating select redundant array of independent NAND-type memory devices (RAIN) parity data for non-parity codewords of the select wordline across the plurality of planes while excluding use of dynamicXOR parity codewords of the select wordline in the generating of the select RAIN parity data;
- storing the select RAIN parity data across non-parity codewords of the select wordline on a designated RAIN parity plane of the memory device;
- generating additional dynamicXOR parity data for the select RAIN parity data stored across RAIN parity codewords in the select wordline on the designated RAIN parity plane;
- and
- storing the additional dynamicXOR parity data in a dynamicXOR parity codeword of the select wordline on the designated RAIN parity plane.
At least one non-transitory machine-readable storage medium comprising instructions that, when executed by a processing device, cause the processing device to perform operations comprising:
- storing host data across non-parity codewords of a select wordline across planes of a plurality of non-parity memory die of a memory device;
- for an individual memory die of the plurality of non-parity memory die:
- generating select dynamic exclusively OR (dynamicXOR) parity data for a portion of the host data stored across non-parity codewords in the select wordline on the individual memory die;
- and
- storing the select dynamicXOR parity data in a set of dynamicXOR parity codewords of the select wordline on the individual memory die;
- generating Mth redundant array of independent NAND-type memory devices (RAIN) parity data for codewords of the select wordline on a Mth plane of each non-parity memory die of the plurality of non-parity memory die;
- and
- storing the Mth RAIN parity data across codewords of the select wordline on a Mth plane of a parity memory die of the memory device.
A method comprising:
- storing host data across non-parity codewords of a select wordline across a plurality of planes of a plurality of memory die of a memory device, the plurality of memory die comprises a first memory die through Nth memory die;
- for an individual memory die of the first memory die through a (N-1)th memory die of the plurality of memory die:
- generating select dynamic exclusively OR (dynamicXOR) parity data for a portion of the host data stored across non-parity codewords in the select wordline on the individual memory die;
- and
- storing the select dynamicXOR parity data in a set of dynamicXOR parity codewords of the select wordline on the individual memory die;
- generating select redundant array of independent NAND-type memory devices (RAIN) parity data for codewords of the select wordline across the plurality of planes including dynamicXOR parity codewords of the select wordline;
- and
- storing the select RAIN parity data across codewords of the select wordline on a designated RAIN parity plane of the Nth memory die.
Dependencies are inferred from the claim text.