Extreme ultraviolet lithography system
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsSsu-Yu Chen, Po-Chung Cheng, Li-Jui Chen, Che-Chang Hsu, Chi Yang
Life of this patent
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Abstract
An extreme ultraviolet (EUV) lithography system includes a vane bucket module. The vane bucket module includes a temperature adjusting pack and a collecting tank located in the temperature adjusting pack. The temperature adjusting pack has a plurality of inlets. The collecting tank has a cover and the cover includes a plurality of through holes. The inlets of the temperature adjusting pack are communicated with the through holes of the cover. Each through hole exhibits a trapezoidal shape in a cross-sectional view.
Claims20
An extreme ultraviolet (EUV) lithography system, comprising:
- a vane bucket module, comprising:
- a temperature adjusting pack having a plurality of inlets;
- and
- a collecting tank located in the temperature adjusting pack, wherein the collecting tank has a cover, the cover comprises a plurality of through holes, the inlets of the temperature adjusting pack are communicated with the through holes of the cover, and each through hole exhibits a trapezoidal shape in a cross-sectional view.
An extreme ultraviolet (EUV) lithography system, comprising:
- a collector, configured to collect and reflect EUV light generated from plasma;
- and
- a droplet generator, a droplet catcher, and a vane bucket module each spaced apart from one another, wherein the droplet generator, the droplet catcher, and the vane bucket module are disposed over the collector, and the vane bucket module comprises:
- a temperature adjusting pack having a plurality of inlets;
- and
- a collecting tank located in the temperature adjusting pack, wherein the collecting tank has a cover, the cover comprises a plurality of through holes, the inlets of the temperature adjusting pack are communicated with the through holes of the cover, the cover has a top surface and a bottom surface opposite to the top surface, and a distance between the top surface and the bottom surface at an edge of the cover is greater than a distance between the top surface and the bottom surface at a center of the cover.
An extreme ultraviolet (EUV) lithography system, comprising:
- a collector, configured to collect and reflect EUV light generated from plasma;
- and
- a droplet generator, a droplet catcher, and a vane bucket module each spaced apart from one another, wherein the droplet generator, the droplet catcher, and the vane bucket module surround a center of the collector, and the vane bucket module comprises:
- a collecting tank having a cover, the cover comprises a plurality of through holes, wherein in a cross-sectional view, each through hole has a first side, a second side opposite to and parallel to the first side, and a third side connecting the first side and the second side, the third side respectively forms a right angle with the first side and the second side, and a length of the first side is greater than a length of the second side;
- and
- a temperature adjusting pack surrounding the collecting tank, wherein the temperature adjusting pack comprises a plurality of inlets communicated with the through holes of the cover.
Dependencies are inferred from the claim text.