Magnetic annealing of metal oxide based resists
AssigneeApplied Materials, Inc.
InventorNASRIN KAZEM
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Abstract
Embodiments described herein relate to a method for developing a resist layer that has been exposed to form an exposed region with metal radicals. In an embodiment, the method may include applying a magnetic field to the resist layer, where the magnetic field aligns the metal radicals within the exposed region into substantially vertical lines. In an embodiment, the method may further include implementing a post exposure bake of the resist layer, and removing the exposed region of the resist layer or an unexposed region of the resist layer with a developing process to form a patterning mask.
Claims20
A method for developing a resist layer that has been exposed to form an exposed region with metal radicals, comprising:
- applying a magnetic field to the resist layer, wherein the magnetic field aligns the metal radicals within the exposed region into substantially vertical lines;
- implementing a post exposure bake of the resist layer;
- and
- removing the exposed region of the resist layer or an unexposed region of the resist layer with a developing process to form a patterning mask.
A method for developing a resist layer, comprising:
- exposing a region of the resist layer to extreme ultraviolet (EUV) radiation, wherein the EUV radiation generates metal radicals in an exposed region of the resist layer;
- exposing the resist layer to a magnetic field, wherein magnetic field lines of the magnetic field are oriented at an angle between 0° and 90° with respect to a surface of the resist layer, and wherein the magnetic field aligns the metal radicals within the exposed region;
- implementing a post exposure bake of the resist layer;
- and
- removing the exposed region of the resist layer or an unexposed region of the resist layer with a developing process to form a patterning mask.
A method, comprising:
- applying a resist layer over a substrate, wherein the resist layer comprises a metal oxide cluster;
- exposing a region of the resist layer to deep ultraviolet (DUV) radiation and/or extreme ultraviolet (EUV) radiation, wherein the DUV radiation and/or EUV radiation generates metal radicals from the metal oxide cluster in an exposed region of the resist layer;
- exposing the resist layer to a magnetic field, and wherein the magnetic field aligns the metal radicals within the exposed region;
- implementing a post exposure bake of the resist layer;
- and
- removing the exposed region of the resist layer or an unexposed region of the resist layer with a developing process to form a patterning mask.
Dependencies are inferred from the claim text.