Lithography method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYen-Hao CHEN, Wei-Han LAI, Kuan-Hsin LO, Yahru CHENG
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Abstract
A lithography method comprises the following steps. An auxiliary composition is applied over the target layer to form an auxiliary layer, wherein the auxiliary composition comprises a first polymer, the first polymer comprises a first functional group including a first boronic acid (BOH2) group, a first multi-OH group, or a combination thereof. A photoresist composition is applied over the auxiliary layer to form a photoresist layer. The photoresist layer is exposed. The photoresist layer is developed.
Claims20
A lithography method, comprising:
- applying an auxiliary composition over a substrate to form an auxiliary layer, wherein the auxiliary composition comprises a first polymer, the first polymer comprises a first functional group including a first boronic acid (BOH2) group, a first multi-OH group, or a combination thereof;
- applying a photoresist composition over the auxiliary layer to form a photoresist layer;
- exposing the photoresist layer;
- and
- developing the photoresist layer.
A multilayer stack, comprising:
- an auxiliary layer, wherein the auxiliary layer comprises a first polymer, the first polymer comprises a first functional group including a first boronic acid (BOH2) group, a first multi-OH group, or a combination thereof;
- and
- a photoresist layer over the auxiliary layer.
A photoresist composition, comprising:
- a polymer, comprising a functional group including a second boronic acid (BOH2) group, a second multi-OH group, or a combination thereof;
- a photoacid generator;
- and
- a solvent.
Dependencies are inferred from the claim text.