Lithography focus control method

A device comprising:

• an integrated circuit (IC) pattern occupying a device area of a semiconductor device wafer or IC die;
• and
• a set of multiple pattern focus (MPF) marks disposed in the device areas and/or in areas surrounding the device areas;
• wherein each MPF mark of the set of MPF marks has a same pattern comprising a set of features in which the features of the set of features have different critical dimension (CD) sizes.

A photolithography system comprising:

• a photolithography mask including a substrate, an integrated circuit (IC) fabrication pattern disposed on the substrate, and a set of multiple pattern focus (MPF) marks disposed on the substrate, wherein each MPF mark of the set of MPF marks has a same pattern comprising a set of features in which the features of the set of features have different critical dimension (CD) sizes;
• an optical projection system including a plurality of manipulators;
• and
• a computer configured to construct a spatial focus map of a photolithography exposure of a photoresist coating on a semiconductor wafer performed using the photolithography mask and the optical projection system, the spatial focus map being constructed based on measured dimensions of features of the developed photoresist pattern corresponding to the features of the MPF marks.