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US 2026/0310069 A1Published application
Semiconductor apparatus and method of operating the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWen LO, Shih-Ming CHANG, Chun-Hung LIU
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Abstract
A method includes generating a plurality of electron beams toward a work piece; and modifying the plurality of electron beams using a shaping aperture, such that a pattern of the plurality of electron beams comprises a main region; and an edge region having a ring-shape enclosing the main region, wherein the edge region has a greater energy intensity than the main region.
Claims20
A method, comprising:
- generating a plurality of electron beams toward a work piece;
- and
- modifying the plurality of electron beams using a shaping aperture, such that a pattern of the plurality of electron beams comprises:
- a main region;
- and
- an edge region having a ring-shape enclosing the main region, wherein the edge region has a greater energy intensity than the main region.
3 more elements
A method, comprising:
- generating a first electron beam toward a workpiece;
- modifying the first electron beam through a shaping aperture, such that the first electron beam has a first triangular pattern;
- generating a second electron beam toward he work piece;
- and
- modifying the second electron beam through the shaping aperture, such that the second electron beam has a second triangular pattern, wherein the first triangular pattern and the second triangular pattern collectively form a rectangular pattern.
2 more elements
A method, comprising:
- generating a first electron beam toward a workpiece;
- modifying the first electron beam through a shaping aperture, such that the first electron beam has a first pattern, wherein the first pattern has a main region and an edge region, wherein the edge region has a greater energy intensity than the main region;
- generating a second electron beam toward he work piece;
- and
- modifying the second electron beam through the shaping aperture, such that the second electron beam has a second pattern, the second pattern having a bar-shape, wherein the second pattern is adjacent to the main region of the first pattern.
2 more elements
Dependencies are inferred from the claim text.