Gap-fill and bond film interface opening in optical applications
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChia-Chun Kao, Chia-Hsin Chen, Chiahung Liu
Life of this patent
Estimating the term…
Loading patent…
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChia-Chun Kao, Chia-Hsin Chen, Chiahung Liu
Estimating the term…
A method includes etching a plurality of dielectric layers in a photonic die to form an opening. The opening overlaps a grating coupler, wherein the photonic die includes a first top surface at a first level. The method further includes forming a first dielectric region in the opening, attaching an electronic die to the photonic die, wherein the photonic die comprises a second top surface at a second level, and forming a gap-fill region to encircle the electronic die. The gap-fill region includes a second dielectric region that includes a first dielectric material, and the first dielectric material extends from the second level to the first level. A supporting substrate is bonded over the gap-fill region and the electronic die, wherein the supporting substrate includes a micro lens.
A method comprising:
A method comprising:
A method comprising:
Dependencies are inferred from the claim text.