Semiconductor structure and method of fabricating the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorFeng-Wei Kuo
Life of this patent
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Abstract
A method includes providing a first semiconductor layer over a dielectric layer, the dielectric layer having a bottom surface. The method further includes forming a grating coupler in the first semiconductor layer, the grating coupler including a plurality of scattering elements arranged in an apodized pattern. The method further includes providing a second semiconductor layer having a first top surface. The method further includes forming a metal layer in the second semiconductor layer, the metal layer having a second top surface that is planar with the first top surface. The method further includes bonding the bottom surface to the second top surface.
Claims20
A method, comprising:
- providing a first semiconductor layer over a dielectric layer, the dielectric layer having a bottom surface;
- forming a grating coupler in the first semiconductor layer, the grating coupler including a plurality of scattering elements arranged in an apodized pattern;
- providing a second semiconductor layer having a first top surface;
- forming a metal layer in the second semiconductor layer, the metal layer having a second top surface that is planar with the first top surface;
- and
- bonding the bottom surface to the second top surface.
A method, comprising:
- providing a first semiconductor layer over a dielectric layer, the dielectric layer having a bottom surface;
- forming a grating coupler in the first semiconductor layer;
- providing a second semiconductor layer having a first top surface;
- patterning the second semiconductor layer to form a trench;
- depositing a seed layer in the trench;
- depositing a metal layer over the seed layer, the metal layer having a second top surface;
- planarizing the metal layer such that the second top surface is planar with the first top surface;
- and
- bonding the bottom surface to the second top surface.
A method, comprising:
- providing a first semiconductor layer over a dielectric layer, the dielectric layer having a bottom surface;
- etching the first semiconductor layer to form a grating coupler including a plurality of scattering elements;
- providing a second semiconductor layer having a first top surface;
- forming a metal layer in the second semiconductor layer, the metal layer having a second top surface that is planar with the first top surface;
- and
- bonding the bottom surface to the second top surface.
Dependencies are inferred from the claim text.