Method for testing semiconductor structure

A method for testing a semiconductor structure, comprising:

• placing the semiconductor structure on a conductive socket disposed in a base;
• pressing the semiconductor structure by moving a thermal interface material structure;
• compressing a plurality of thermal conductive strips embedded in a resilient material, wherein the thermal conductive strips are shortened during the compression;
• testing the semiconductor structure via the conductive socket while the semiconductor structure is pressed by the thermal interface material structure;
• and
• releasing the thermal interface material structure from the semiconductor structure.

A method for testing a semiconductor structure, comprising:

• placing the semiconductor structure on a conductive socket disposed in a base;
• pressing the semiconductor structure by moving a thermal interface material structure, wherein the thermal interface material structure comprises:
• a resilient material;
• and
• a metal film around the resilient material and configured to contact the semiconductor structure, wherein widths of the resilient material and the metal film increase while pressing the semiconductor structure;
• testing the semiconductor structure via the conductive socket;
• and
• releasing the thermal interface material structure from the semiconductor structure.