Bio-field-effect transistor with enhanced temporal stability

Abstract

One or more systems, devices and/or methods of fabrication provided herein relate to forming a semiconductor device for biosensing with enhanced temporal stability. According to an embodiment, a semiconductor device is provided. In various embodiments, the semiconductor device can comprise a semiconductor channel. In various embodiments, the semiconductor device can further comprise a gate electrode that can modulate current through the semiconductor channel, wherein the gate electrode can comprise two or more stacked layers, wherein the two or more stacked layers can be composed of an oxide or a nitride. In various embodiments, the semiconductor device can further comprise a biorecognition layer grafted to a top surface of the gate electrode.

Dependencies are inferred from the claim text.