Method for measuring defects in two-component compound wafer and apparatus thereof

Abstract

The present embodiment relates to a method for measuring defects in two-component compound wafer capable of detecting P-Count ScN defects in a two-component compound wafer using a highly accurate quantitative measurement method, and an apparatus thereof. According to one aspect of the embodiment, a method for measuring defects in a two-component compound wafer is provided, and the method includes a first step of measuring content of matrix A elements and matrix B elements in a wafer composed of the matrix A elements and the matrix B elements; and a second step of calculating a ratio of the matrix A elements and the matrix B elements measured in the first step to determine a P-Count ScN defect level.

Dependencies are inferred from the claim text.