Apparatus and method for sensing rf signals from rf plasma processing equipment
AssigneeApplied Materials, Inc.
InventorsMichael HOPKINS, Paul John SCULLIN, John LENNON, Thomas Dermot GILMORE
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Abstract
The present teachings relate to a sensing device for monitoring electromagnetic radiation emanating from a plasma processing system comprising at least two of (i) a first probe for detecting a time varying RF electric field, (ii) a second probe for detecting a time varying RF magnetic field, and (iii) an optical probe for detecting the modulated light emission; and the sensing device further comprising a signal processing unit configured to receive a signal from each probe and to monitor the electromagnetic radiation with respect to only a single frequency of each signal.
Claims20
A sensing device for monitoring electromagnetic radiation emanating from a plasma processing system, comprising:
- at least two of:
- (i) a first probe for detecting a time varying RF electric field;
- (ii) a second probe for detecting a time varying RF magnetic field;
- and
- (iii) an optical probe for detecting the modulated light emission;
- and
- an in-quadrature module and a local oscillator, wherein the signal processing unit is configured to:
- receive one or more signals from the at least two probes;
- monitor the electromagnetic radiation with respect to only a selected frequency of each signal;
- and
- multiply each signal from each probe by a signal generated by the local oscillator to generate an in-quadrature output corresponding to the selected frequency.
Dependencies are inferred from the claim text.