Method for suppressing variation in light emission intensity of background in photoluminescence measurement, and evaluation method for semiconductor substrate

Abstract

A problem to be solved by the present invention is to provide a novel technology capable of suppressing variation in background light emission intensity in photoluminescence measurement. The present invention is a method for suppressing variation in background light emission intensity in photoluminescence measurement, the method including a subsurface damaged layer removal step S10 of removing at least a part of a subsurface damaged layer 11 present in a semiconductor substrate 10, and a photoluminescence measurement step S30 of acquiring distribution information of crystal defects of the semiconductor substrate 10 by photoluminescence measurement.

Dependencies are inferred from the claim text.