Architecture of an absorption zone for an infrared detector

A detection device (D1) configured to detect infrared radiation at a predetermined operating temperature, comprising at least one pixel (Pxl) formed by a stack of layers on a substrate (SUB) in the first direction (Z) normal to said substrate (SUB), said pixel comprising an absorption heterostructure (SPA), said absorption heterostructure (SPA) comprising at least:

• a first planar absorption structure (C11, SR1) having a first maximum valence band value (Ev1);
• and a second planar absorption structure (C12, SR2) adjacent to the first planar absorption structure (C11, SR1);
• said second planar absorption structure (C12, SR2) having a second maximum valence band value (Ev2) distinct from the first maximum valence band value (Ev1);
• the thickness (e11, e12, eSR1, eSR2) of each of the first and second planar absorption structures (C11, SR1, C12, SR2) being greater than or equal to 20 nm;
• the thickness (e11, e12, eSR1, eSR2) of each of the first and second planar absorption structures being selected so as to create at least one interface electric field (E) at the interface between the second planar absorption structure (C12, SR2) and the first planar absorption structure (C11, SR1), said interface electric field (E) being oriented in said first direction (Z).