Electrolyte for forming anodic oxide film, method of forming anodic oxide film, and anodic oxide film and member for semiconductor device manufactured thereby

Abstract

Proposed is an anodic oxide film including a barrier layer without a porous layer, wherein the anodic oxide film has a thickness of 500 nm or greater and 900 nm or smaller. The anodic oxide film may be manufactured by forming the anodic oxide film on a metal member using an electrolyte including citric acid and an additive, wherein the additive includes one or more selected from among tartaric acid, sulfuric acid, and sodium acetate.

Dependencies are inferred from the claim text.