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US 2026/0308770 A1Published application
Vapor-phase etch of metal-containing materials
AssigneeVersum Materials US, LLC
InventorsMartin McBriarty, Nguyen Vu, Bhushan Zope
Life of this patent
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Abstract
The disclosed and claimed subject matter relates to processes for performing selective thermal vapor-phase etching of metals, including Ti, Co, Ni, Cu, Mo, Ru, Ta and/or W, and compounds thereof, such as oxides, hydroxides, oxyhydroxides, carbonates, carbides, fluorides, or chlorides, which do not require the use of plasmas or halogenated volatilizing agents.
Claims25
A process for etching a metal-containing material from a surface of a substrate, the steps comprising:
- a Volatilization Step comprising:
- (i) exposing the metal-containing material to one or more volatilizing agents comprising one or more halogen-free organic acids selected from the group of propionic acid, isobutyric acid, pivalic acid, acetic acid, butanoic acid, acrylic acid, methacrylic acid, 2-methylbutanoic acid, 3-methylbutanoic acid, 3-butenoic acid, cyclopropanecarboxylic acid, pentanoic acid, (2E)-but-2-enoic acid and (Z)-2-butenoic acid to produce a volatile byproduct from the metal-containing material,
- (ii) a purge;
- and
- optionally a Surface Modification Step comprising:
- (a) exposing the metal-containing material to one or more surface modification agents comprises one or more chlorinating agent to form a metal-containing material that is different than the metal-containing material prior to exposure to the one or more surface modification agents;
- and
- (b) a purge.
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Dependencies are inferred from the claim text.