Composition For TiN Hard Mask Removal While Compatible With Tungsten
AssigneeVersum Materials US, LLC
InventorsYuanmei Cao, Laisheng Sun, Aaron Pejlovas, Jhih-Kuei Ge, Aiping Wu
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Abstract
Composition, method and system for TiN hard mask removal from electronic circuitry devices, such as advanced pattern wafers, have been disclosed. The etching formulations include, consist essentially of or consist of (a) at least one phosphorous containing acid or salt thereof, (b) at least one oxidizing agent, (c) at least one at least one cationic polymer corrosion inhibitor and (d) at least one solvent.
Claims37
An etching formulation comprising:
- (a) at least one phosphorous containing acid or salt thereof;
- (b) at least one oxidizing agent;
- (c) at least one cationic polymer corrosion inhibitor;
- and
- (d) water.
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Dependencies are inferred from the claim text.