Composition exhibiting narrow photoluminescence line width
OwnerHunter MCDANIEL, Nikolay S. MAKAROV +3inventors
InventorsHunter MCDANIEL, Nikolay S. MAKAROV, Karthik RAMASAMY, Riley KELEHAN, Ronald CICHOCKI
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Abstract
A semiconductor quantum dot composition exhibiting narrow photoluminescence line width and/or faster PL decay.
Claims15
A composition AgInSexS2-x having an emission spectrum with a full width half maximum (FWHM) of less than about 0.20 eV and a peak photoluminescence wavelength in the range of 750 nm to 950 nm, wherein 0≤x≤2.
A composition selected from the group consisting of CuInSexS2-x, AgInSexS2-x, and CuyAg1-yInSexS2-x having an emission spectrum with a full width half maximum (FWHM) of less than about 0.20 eV and a tunable peak photoluminescence wavelength in the range of 400 to 1400 nm, wherein 0≤x≤2 and 0≤y≤1.
A semiconductor nanocrystal containing at least silver or copper or both, in combination with indium having a mid-gap state that contributes an electron to the valence band enabling the conduction band to provide a photoexcited electron to the same mid-gap state with narrow range of energies, less than 300 meV in FWHM.
A polymer film containing a weight percentage between about 0.05% and 50% of quantum dots selected from the group consisting of CuInSexS2-x, AgInSexS2-x, and CuyAg1-yInSexS2-x having an emission spectrum with a full width half maximum (FWHM) of less than about 0.20 eV, the polymer film comprised of a polymer selected from the group consisting of polyolefin, ethylene vinyl acetate, polyethylene, polyurethane, polyvinyl butyral, ionomers, acrylic and thereof, wherein 0≤x≤2 and 0≤y≤1.
A polymer film containing a percentage of quantum dots selected from the group consisting of CuInSexS2-x, AgInSexS2-x, and CuyAg1-yInSexS2-x having an emission spectrum with a full width half maximum (FWHM) of less than about 0.20 eV and a tunable peak photoluminescence wavelength in the range of 530 to 1400 nm, the polymer film comprised of a polymer selected from the group consisting of polyolefin, ethylene vinyl acetate, olyethylene, polyurethane, polyvinyl butyral, ionomers, acrylic and thereof, wherein 0≤x≤2 and 0≤y≤1.
A semiconductor nanocrystal having a mid-gap state that contributes an electron to the valence band enabling the conduction band to provide a photoexcited electron to the same mid-gap state with narrow range of energies, less than 300 meV in FWHM.
A semiconductor nanocrystal having a composition CuyAg1-yInSexS2-x wherein 0≤x≤2 and 0≤y≤1 and a distribution of lowest conduction band states and highest valence band states that together have with narrow range of transition energies less than 300 meV in FWHM.
Dependencies are inferred from the claim text.