Oxyhalide precursors
AssigneeEntegris, Inc.
InventorsDavid M. Ermert, Robert L. Wright, JR., Thomas H. Baum, Bryan C. Hendrix
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Abstract
The invention provides a process for preparing molybdenum and tungsten oxyhalide compounds which are useful in the deposition of molybdenum and tungsten containing films on various surfaces of microelectronic devices. In the process of the invention, a molybdenum or tungsten trioxide is heated in either a solid state medium or in a melt-phase reaction comprising a eutectic blend comprising alkaline and/or alkaline earth metal salts. The molybdenum or tungsten oxyhalides thus formed may be isolated as a vapor and crystallized to provide highly pure precursor compounds such as MoO2Cl2.
Claims20
A process for preparing a tungsten oxyhalide compound, comprising contacting WO3 with at least one compound of the formula A-X, wherein A is chosen from elements of Group 1, Group 2, transition metals, and main-group elements, and X is chosen from chloro, fluoro, bromo, and iodo, at a temperature of about 200° C. to about 900° C., thereby producing a tungsten oxyhalide compound of the formula WOyXz, wherein y is 1 or 2 and z is 2 or 4;
- collecting the tungsten oxyhalide compound as a vapor;
- and
- condensing the vapor to form a crystalline form of the tungsten oxyhalide compound.
Dependencies are inferred from the claim text.