Method for manufacturing semiconductor device and semiconductor device

Abstract

In this method for manufacturing a semiconductor device, first, a substrate 10A including a support substrate 11A, and a conductive part 12A and a polyimide film 13A disposed on the support substrate 11A is prepared. Thereafter, a surface side portion 132 of the polyimide film 13A is cut by a fly-cutting method. In this method for manufacturing a semiconductor device, a tensile modulus of an organic insulating material constituting the polyimide film 13A is 3.5 GPa or less. By using the organic insulating material with such a tensile modulus, wear of an apparatus used for the fly-cutting method is suppressed, and a surface roughness of the substrate 10A can be reduced. Such a substrate 10A can be used, for example, for hybrid bonding.

Dependencies are inferred from the claim text.