Method of manufacturing 3dic package comprising a plurality of discrete device dies bonding to a wafer
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChing-Yu Huang, Kuo-Chiang Ting, Ting-Chu Ko
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Abstract
A method includes bonding a first device die to a second device die through face-to-face bonding, wherein the second device die is in a device wafer, forming a gap-filling region to encircle the first device die, performing a backside-grinding process on the device wafer to reveal a through-via in the second device die, and forming a redistribution structure on the backside of the device wafer. The redistribution structure is electrically connected to the first device die through the through-via in the second device die. A supporting substrate is bonded to the first device die.
Claims20
A package comprising:
- a first device die comprising:
- a first semiconductor substrate;
- and
- first active devices on a first front surface of the first semiconductor substrate;
- a second device die bonding to the first device die, wherein the second device die comprises:
- a second semiconductor substrate;
- second active devices on a second front surface of the second semiconductor substrate, wherein the first front surface and the second front surface face each other;
- a first through-via penetrating through the second semiconductor substrate;
- and
- an interconnect structure on a backside of the second device die;
- and
- a supporting substrate bonding to the first device die.
A package comprising:
- a first device die;
- a supporting substrate over and joined to the first device die, wherein the supporting substrate is free from active devices and passive devices therein;
- a thermal interface material;
- a metal feature over and attached to the supporting substrate through the thermal interface material;
- and
- a second device die underlying and joined to the first device die, wherein the second device die comprises:
- a through-via therein;
- and
- a backside interconnect structure underlying and connected to the through-via.
A package comprising:
- a first die comprising a first bond layer and a first bond pad in the first bond layer;
- a gap-filling material comprising portions on opposite sides of the first die;
- a second die underlying the first die, the second die comprising
- a second bond layer joined to the first bond layer;
- a second bond pad in the second bond layer and joined to the first bond pad;
- a dielectric layer underlying and joined to the second bond layer;
- a metal pad underlying and joined to the dielectric layer, wherein a lower portion of the second bond layer is in the dielectric layer, and is in contact with the metal pad;
- a semiconductor substrate underlying the dielectric layer;
- and
- a through-via in the semiconductor substrate, wherein the through-via is electrically connected to the second bond pad;
- and
- a supporting substrate over and attached to the first die.
Dependencies are inferred from the claim text.