Hybrid Underfill Structures for Multi-Die Packages and Methods of Forming the Same

A semiconductor package, comprising:

• an interconnect structure;
• a multi-die chip attached to the interconnect structure;
• a non-conductive film formed in a first region between the multi-die chip and the interconnect structure;
• and
• a capillary underfill material formed in a second region between the multi-die chip and the interconnect structure, wherein the first region is laterally surrounded on all sides by the second region in a plan view.

A method of forming a semiconductor package, comprising:

• forming a non-conductive film over a first region of an interconnect structure;
• attaching at least one semiconductor die to the interconnect structure such that the non-conductive film is disposed between a first portion of the at least one semiconductor die and the interconnect structure;
• and
• forming a capillary underfill material between a second portion of the at least one semiconductor die and the interconnect structure, wherein the non-conductive film is laterally surrounded on all sides by the capillary underfill material in a plan view.