Semiconductor memory device
AssigneeKioxia Corporation
InventorsTomoya SANUKI, Hiroshi MAEJIMA, Tetsuaki UTSUMI
Life of this patent
Estimating the term…
Abstract
According to one embodiment, a semiconductor memory device includes a memory cell, a first voltage generator and a second voltage generator. The memory cell is provided above a substrate. The first voltage generator is provided between the substrate and the memory cell. The first voltage generator is configured to generate a first voltage to be supplied to the memory cell. The second voltage generator is provided between the substrate and the memory cell. The second voltage generator is configured to generate the first voltage and have a circuit configuration equivalent to the first voltage generator.
Claims20
A semiconductor memory device comprising:
- a memory cell array;
- and
- a pad region provided adjacent to the memory cell array, and including a plurality of first pads and an alignment mark,
- wherein the plurality of first pads are for connecting a memory controller provided outside the semiconductor memory device.
A semiconductor memory device comprising:
- a memory cell array;
- and
- a pad region provided adjacent to the memory cell array, and including a plurality of first pads and a dimension measurement mark,
- wherein the plurality of first pads are for connecting a memory controller provided outside the semiconductor memory device.
Dependencies are inferred from the claim text.