Method for manufacturing semiconductor device

Abstract

In this method a substrate 10 is prepared that includes a support substrate 11, a conductive part 12, and a polyimide film 13 provided on the support substrate 11 and on the conductive part 12. The polyimide film 13 includes a first portion 13a covering a surface of the support substrate 11 and a side surface of the conductive part 12, and a second portion 13b positioned on the first portion 13a and covering a top surface of the conductive part 12. In this method, after cutting at least a part of the second portion 13b by a fly-cutting method while leaving the first portion 13a, a surface of the polyimide film 13 is polished. As a result, an operation time in the polishing is shortened, and the surface roughness of the substrate 10 can be easily reduced. The substrate 10 can be used for hybrid bonding.

Dependencies are inferred from the claim text.