US 2026/0305409 A1 · METHODS OF SINGULATING EMBEDDED INTERCONNECT BRIDGE DIE STRUCTURES

Abstract

Microelectronic integrated circuit package structures include a package structure comprising an embedded bridge interconnect structure within a substrate, the embedded interconnect bridge structure having a plurality of vias extending through a silicon layer, the silicon layer having two or more scallop structures. A non-conductive layer is on a first side of the silicon layer, and a dielectric layer is on a second side of the silicon layer. A plurality of die contacts are at least partially on a surface of the dielectric layer. A first die is over the embedded interconnect bridge structure, the first die coupled to the plurality of die contacts. A second die is over the embedded interconnect bridge structure, adjacent to the first die, the second die coupled to the plurality of die contacts.

Claims20

Dependent claims

An apparatus, comprising:

a bridge structure within a substrate, the bridge structure comprising:
a plurality of vias extending through a silicon layer, wherein a sidewall of the silicon layer comprises two or more scallop structures;
a non-conductive layer on a first side of the silicon layer, wherein one or more conductive bumps are embedded within the non-conductive layer;
a dielectric layer on a second side of the silicon layer;
and
a plurality of die contacts at least partially on a surface of the dielectric layer;
a first die over the bridge structure, the first die coupled to the plurality of die contacts;
and
a second die over the bridge structure, adjacent to the first die, the second die coupled to the plurality of die contacts.

6 more elements

Dependencies are inferred from the claim text.

Methods of singulating embedded interconnect bridge die structures

Life of this patent

Methods of singulating embedded interconnect bridge die structures

Life of this patent

Abstract

Claims20