US 2026/0305394 A1 · SEMICONDUCTOR STRUCTURE AND METHODS OF MANUFACTURING THE SAME

Abstract

A semiconductor structure includes a substrate, a semiconductor device, a plurality of conductive pillars, a first redistribution circuit structure, and a semiconductor die. The substrate includes a first sub-layer and a second sub-layer disposed thereon. The semiconductor device is disposed in the second sub-layer and over the first sub-layer. The plurality of conductive pillars penetrate through the substrate and is next to the semiconductor device. The first redistribution circuit structure is disposed over the substrate and electrically coupled to the semiconductor device and the plurality of conductive pillars. The semiconductor die is disposed over and electrically coupled to the first redistribution circuit structure and electrically coupled to the semiconductor device through the first redistribution circuit structure, where the first redistribution circuit structure is disposed between the semiconductor die and the substrate.

Claims20

Dependent claims

A semiconductor structure, comprising:

a substrate, comprising a first sub-layer and a second sub-layer disposed thereon;
a semiconductor device, disposed in the second sub-layer and over the first sub-layer;
a plurality of conductive pillars, penetrating through the substrate and next to the semiconductor device;
a first redistribution circuit structure, disposed over the substrate and electrically coupled to the semiconductor device and the plurality of conductive pillars;
and
a semiconductor die, disposed over and electrically coupled to the first redistribution circuit structure and electrically coupled to the semiconductor device through the first redistribution circuit structure, wherein the first redistribution circuit structure is disposed between the semiconductor die and the substrate.

3 more elements

A semiconductor structure, comprising:

a glass-based substrate, comprising:
a base substrate;
and
a stacking substrate, disposed over the base substrate, wherein the stacking substrate has a plurality of sub-layers stacked on each other;
a first semiconductor device and a second semiconductor device, disposed in the stacking substrate, wherein a first distance between the first semiconductor device and the base substrate is different from a second distance between the second semiconductor device and the base substrate;
a first redistribution circuit structure, disposed over the glass-based substrate and electrically coupled to the first semiconductor device and the second semiconductor device;
and
a semiconductor die, disposed over and electrically coupled to the first redistribution circuit structure and electrically coupled to the first semiconductor device and the second semiconductor device through the first redistribution circuit structure, wherein the first redistribution circuit structure is disposed between the semiconductor die and the glass-based substrate.

5 more elements

A method of manufacturing a semiconductor structure, comprising:

providing a first substrate;
providing a second substrate with a through opening hole penetrating therethrough;
bonding the second substrate to the first substrate to form a substrate, wherein a portion of a surface of the first substrate is accessibly revealed by the through opening hole;
forming a plurality of openings in the substrate, the plurality of openings extending from the first substrate to the second substrate;
disposing a semiconductor device in the through opening hole over the portion of the surface of the first substrate accessibly revealed by the through opening hole;
forming a plurality of conductive pillars in the plurality of openings, respectively;
forming a first distribution circuit structure and a second distribution circuit structure at two opposite sides of the substrate, the first distribution circuit structure being electrically coupled to the second distribution circuit structure through the plurality of conductive pillars;
disposing a semiconductor die over the first distribution circuit structure;
and
disposing a plurality of conductive terminals over the second distribution circuit structure.

7 more elements

Dependencies are inferred from the claim text.

Semiconductor structure and methods of manufacturing the same

Life of this patent

Semiconductor structure and methods of manufacturing the same

Life of this patent

Abstract

Claims20