Rfsoi semiconductor structures including an electromagnetic shield layer and methods of manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsFu-Hai Li, Chien Hung Liu, Hsien Jung Chen, Kuo-Ching Huang, Harry-Hak-Lay Chuang
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Abstract
A semiconductor may include a handle substrate, a semiconductor material layer on which semiconductor devices, metal interconnect structures, dielectric material layers, and an inductor structure are located, and a patterned magnetic shielding layer including at least one portion of a ferromagnetic material having relative permeability of at least 20 and disposed between the semiconductor material layer and the handle substrate and reducing electromagnetic coupling between the inductor structure and the handle substrate.
Claims20
A method of forming a semiconductor structure, the method comprising:
- forming semiconductor devices on a first semiconductor substrate;
- forming dielectric material layers, metal interconnect structures, and an inductor structure over the semiconductor devices;
- thinning the first semiconductor substrate from a backside of the first semiconductor substrate, wherein a remaining portion of the first semiconductor substrate comprises a semiconductor material layer;
- forming a patterned magnetic shielding layer comprising a ferromagnetic material having a relative permeability of at least 20 over a backside surface of the semiconductor material layer;
- and
- bonding a handle substrate to an assembly including the semiconductor material layer and the patterned magnetic shielding layer such that the patterned magnetic shielding layer is embedded in at least one insulating layer located between the handle substrate and the semiconductor material layer.
A method of forming a semiconductor structure, the method comprising:
- fabricating semiconductor devices on a first semiconductor substrate;
- forming dielectric material layers, metal interconnect structures, and an inductor structure over the semiconductor devices;
- depositing a first insulating material layer over the dielectric material layers and the inductor structure;
- forming a patterned magnetic shielding layer comprising a ferromagnetic material having a relative permeability of at least 20 in the first insulating material layer;
- bonding a handle substrate to the first insulating material layer;
- and
- thinning the first semiconductor substrate from a backside after bonding the handle substrate to the first insulating material layer, wherein a remaining portion of the first semiconductor substrate comprises a semiconductor material layer.
A semiconductor structure comprising:
- a semiconductor material layer overlying a handle substrate;
- an inductor structure located in dielectric material layers that overlie the semiconductor material layer;
- at least one insulating layer located between the handle substrate and the semiconductor material layer;
- and
- a patterned magnetic shielding layer comprising a ferromagnetic material having a relative permeability of at least 20 and embedded in the at least one insulating layer between the handle substrate and the semiconductor material layer.
Dependencies are inferred from the claim text.