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US 2026/0305346 A1Published application
Semiconductor package
AssigneeDeepWave, Inc.
InventorsDae-kyu CHOI, Kuk Hwan LEE
Life of this patent
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Abstract
Provided are a semiconductor package and a method of fabricating the same. The semiconductor package includes a package substrate including a first base substrate and a first wiring layer, an interposer including a second base substrate and a second wiring layer, and located on the package substrate, a first chip located on the interposer, and a second chip located on the interposer, wherein one or more of the first base substrate and the second base substrate are silicon (Si) substrates which are substantially undoped or regionally non-uniformly doped.
Claims20
A semiconductor package comprising:
- a package substrate comprising a first base substrate and a first wiring layer;
- an interposer comprising a second base substrate and a second wiring layer, and located on the package substrate;
- a first chip located on the interposer;
- and
- a second chip located on the interposer,
- wherein one or more of the first base substrate and the second base substrate are silicon (Si) substrates which are substantially undoped or regionally non-uniformly doped.
3 more elements
Dependencies are inferred from the claim text.