Semiconductor package structure, heat dissipation material, and manufacturing method thereof
AssigneeMetal Industries Research & Development Centre
InventorsYu-Lung Huang, Yu-Han Chen, Yu-Ting Lyu, Cheng-Yi Liu, Zhang Yuan Luo
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Abstract
The present disclosure relates to a heat dissipation material and a semiconductor package structure. The heat dissipation material includes a liquid multi-component alloy and a gallium-copper intermetallic powder. The liquid multi-component alloy includes 55 wt % to 79.9 wt % of gallium, 15 wt % to 25 wt % of indium, and 5 wt % to 25 wt % of tin. The gallium-copper intermetallic powder is distributed in the liquid multi-element alloy.
Claims19
A heat dissipation material, comprising:
- A liquid multi-component alloy, wherein the liquid multi-component alloy comprises 55 wt % to 79.9 wt % of gallium, 15 wt % to 25 wt % of indium, and 5 wt % to 25 wt % of tin;
- and
- gallium-copper intermetallic powder, distributed in the liquid multi-component alloy.
A semiconductor package structure, comprising:
- a semiconductor die;
- and
- a heat dissipation material layer, located on the semiconductor die, and comprising:
- a liquid multi-component alloy, wherein the liquid multi-component alloy comprises 55 wt % to 79.9 wt % of gallium, 15 wt % to 25 wt % of indium, and 5 wt % to 25 wt % of tin;
- and
- gallium-copper intermetallic powder, distributed in the liquid multi-component alloy.
A manufacturing method for a heat dissipation material, comprising:
- forming gallium-copper intermetallic powder;
- forming a liquid multi-component alloy, wherein the liquid multi-component alloy comprises 55 wt % to 79.9 wt % of gallium, 15 wt % to 25 wt % of indium, and 5 wt % to 25 wt % of tin;
- and
- mixing the gallium-copper intermetallic powder with the liquid multi-component alloy.
Dependencies are inferred from the claim text.