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US 2026/0305335 A1Published application
Power semiconductor module and method of manufacturing the same
AssigneeInfineon Technologies AG
InventorsAndre Uhlemann, Edward Fürgut, Andreas Grassmann, Thorsten Schorn, Philipp Bräutigam, Florian Dreps
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Abstract
The present disclosure relates to a power semiconductor module suitable for forming a joint with a plastic cooler. The power semiconductor module includes a carrier having a metal layer forming an outer surface of the carrier. The metal layer includes an inner region and an outer region. The metal layer in the outer region has a roughness in a range of 0.1 mm to 1.0 mm.
Claims25
A power semiconductor module, comprising:
- a carrier comprising a metal layer forming an outer surface of the carrier,
- wherein the metal layer comprises an inner region and an outer region,
- wherein the metal layer in the outer region has a roughness Ra in a range of 0.1 mm to 1.0 mm.
A power semiconductor module, comprising:
- an electrically insulating layer comprising a first surface;
- and
- a first metal layer arranged over the first surface of the electrically insulating layer,
- wherein the first metal layer comprises a first plurality of trenches and a second plurality of trenches,
- wherein the first plurality of trenches extends inwardly from a first edge of the first metal layer,
- wherein the second plurality of trenches extends inwardly from a second edge of the first metal layer, the second edge being orthogonal to the first edge.
3 more elements
A method for producing a power semiconductor module, the method comprising:
- providing an electrically insulating layer comprising a first surface;
- arranging a first metal layer over the first surface of the electrically insulating layer;
- forming a first plurality of trenches in the first metal layer extending inwardly from a first edge of the first metal layer;
- and
- forming a second plurality of trenches in the first metal layer extending inwardly from a second edge of the first metal layer, wherein the second edge is orthogonal to the first edge.
2 more elements
Dependencies are inferred from the claim text.