Backside power delivery network with reduced resistance connection

A semiconductor structure comprising:

• a field effect transistor including a first drain-source region, a second drain-source region, at least one channel region connecting the first drain-source region and the second drain-source region, and a gate at least partially contacting the at least one channel region;
• a backside power delivery network below the field effect transistor;
• a backside contact connected to the backside power delivery network;
• a backside via coupled directly to the backside contact and running vertically upward next to the field effect transistor;
• and
• a frontside contact including a frontside contact conductive fill and a frontside contact liner, wherein the frontside contact liner is directly between:
• the frontside contact conductive fill and one of the first drain-source region and the second drain-source region;
• and
• the frontside contact conductive fill and the backside via.

A method of forming a semiconductor device, comprising:

• providing an initial semiconductor structure comprising:
• a field effect transistor including a first drain-source region, a second drain-source region, at least one channel region connecting the first drain-source region and the second drain-source region, and a gate at least partially contacting the at least one channel region;
• a backside via running vertically upward next to the field effect transistor;
• and
• a frontside contact portion including a frontside contact conductive fill and a frontside contact liner, the frontside contact liner separating the frontside contact conductive fill from one of the first drain-source region and the second drain-source region and from the backside via;
• partially recessing the frontside contact portion to create a cavity;
• filling the cavity with additional conductive fill that directly contacts the frontside contact conductive fill and the backside via;
• forming a back-end-of-line layer in contact with the additional conductive fill;
• and
• forming a backside power delivery network in contact with the backside via.