Semiconductor structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMIN-FENG KAO, DUN-NIAN YAUNG, HSING-CHIH LIN, JEN-CHENG LIU
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Abstract
A semiconductor structure is provided. The semiconductor structure includes a first die and a second die. The first die includes a substrate, an interconnection structure and a capacitor structure. The substrate has a front-side surface and a back-side surface. The interconnection structure is disposed over the front-side surface. The capacitor structure extends from the back-side surface to the front-side surface and into the interconnection structure. The second die is disposed over the back-side surface and is bonded to the first die. A method for forming a semiconductor structure is also provided.
Claims20
A semiconductor structure, comprising:
- a first die including:
- a first substrate having a first front-side surface and a first back-side surface;
- a first interconnection structure disposed over the first front-side surface;
- and
- a capacitor structure extending from the first back-side surface to the first front-side surface and into the first interconnection structure;
- and
- a second die disposed over the first back-side surface, and bonded to the first die.
A semiconductor structure, comprising:
- a first die including:
- a first substrate having a first front-side surface and a first back-side surface;
- a first interconnection structure disposed over the first front-side surface and including multiple levels of first metal features that are vertically stacked;
- and
- a capacitor structure extending from the first back-side surface to the first front-side surface and into the first metal features;
- a second die bonded to the first die, wherein the second die includes a second substrate having a second front-side surface facing the first back-side surface;
- and
- a third die bonded to the first die, wherein the third die includes a third substrate having a third front-side surface facing the first front-side surface.
A semiconductor structure, comprising:
- a first die including:
- a first substrate having a first front-side surface and a first back-side surface;
- a first interconnection structure disposed over the first front-side surface;
- and
- a capacitor structure extending from the first back-side surface to the first front-side surface and into the first interconnection structure;
- and
- a second die disposed over the first front-side surface of the first die, and bonded to the first die.
Dependencies are inferred from the claim text.