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US 2026/0305309 A1Published application
Air-gapped vias
AssigneeInternational Business Machines Corporation
InventorsKamal Rudra, Ruilong Xie, Lawrence Alfred Clevenger, Kisik Choi, Yann Mignot, Koichi Motoyama
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Abstract
Devices and methods of making the same include a first conductive line on an underlying layer. A first via is on the first conductive line. An interlayer dielectric is around the first via, with an air gap between the interlayer dielectric and the first via.
Claims20
A device, comprising:
- a first conductive line on an underlying layer;
- a first via on the first conductive line;
- and
- an interlayer dielectric around the first via, with an air gap between the interlayer dielectric and the first via.
1 more element
A device, comprising:
- a plurality of parallel conductive lines on an underlying layer, the plurality of parallel conductive lines comprising a first conductive line adjacent to a second conductive line;
- an interlayer dielectric over the plurality of parallel conductive lines;
- a first via within the interlayer dielectric and above the plurality of parallel conductive lines;
- and
- an air gap between the interlayer dielectric and the first via, the air gap extending between the first conductive line and the second conductive line of the plurality of parallel conductive lines.
2 more elements
A method of forming air-gapped vias, comprising:
- forming a conductive line with a via on an underlying layer;
- conformally depositing a spacer on the conductive line and via;
- forming an interlayer dielectric over the spacer, with a top surface of the via exposed;
- and
- etching away the spacer, leaving an air gap between the interlayer dielectric and the via.
2 more elements
Dependencies are inferred from the claim text.