Metal interconnects structures having modified interconnect interfaces

An integrated circuit structure, comprising:

• a device layer including a plurality of fin-based devices;
• a conductive line above the plurality of fin-based devices of the device layer;
• a conductive cap on the conductive line;
• an inter-layer dielectric (ILD) layer above the conductive cap;
• and
• a conductive structure in an opening in the ILD layer and the conductive cap, the conductive structure comprising a conductive barrier layer and a conductive fill, the conductive barrier layer in direct physical contact with the conductive line.

A computing device, comprising:

• a board;
• and
• a component coupled to the board, the component including an integrated circuit structure, comprising:
• a device layer including a plurality of nanowire-based devices or a plurality of fin-based devices;
• a conductive line above the plurality of nanowire-based devices or the plurality of fin-based devices of the device layer;
• a conductive cap on the conductive line;
• an inter-layer dielectric (ILD) layer above the conductive cap;
• and
• a conductive structure in an opening in the ILD layer and the conductive cap, the conductive structure comprising a conductive barrier layer and a conductive fill, the conductive barrier layer in direct physical contact with the conductive line.