Local interconnect
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsCheng-Hsien Wu, Chung-Yi Lin, Yen-Sen Wang
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Abstract
Semiconductor structures and methods are provided. A semiconductor structure according to the present disclosure includes a first metal line extending along a first direction, a second metal line lengthwise aligned with and spaced apart from the first metal line, and a third metal line extending along the first direction. The third metal line includes a branch extending along a second direction perpendicular to the first direction and the branch partially extends between the first metal line and the second metal line.
Claims20
A semiconductor structure, comprising:
- a source/drain contact extending lengthwise along a first direction;
- a gate structure disposed alongside the source/drain contact and extending lengthwise along the first direction;
- a first metal line comprising:
- a linear portion disposed over and vertically overlapping the source/drain contact, and
- a branch portion extending from the linear portion along a second direction perpendicular to the first direction to overhang the gate structure;
- a first via extending vertically between the linear portion and the source/drain contact;
- and
- a second via extending vertically between the branch portion and the gate structure.
A semiconductor structure, comprising:
- a first source/drain contact and a second source/drain contact extending lengthwise along a first direction;
- a gate structure extending lengthwise along the first direction and disposed between the first source/drain contact and the second source/drain contact along a second direction perpendicular to the first direction;
- a first metal line comprising:
- a linear portion disposed over and vertically overlapping the first source/drain contact, and
- a branch portion extending from the linear portion along the second direction to overhang the gate structure;
- and
- a second metal line disposed over and vertically overlapping the second source/drain contact.
A semiconductor structure, comprising:
- an active region comprising a channel region and a source/drain region;
- a source/drain contact disposed over the source/drain region and extending lengthwise along a first direction;
- a gate structure disposed over the channel region and extending lengthwise along the first direction;
- a first metal line comprising:
- a linear portion disposed over and vertically overlapping the source/drain contact, and
- a local interconnect portion extending continuously from the linear portion along a second direction perpendicular to the first direction to overhang the gate structure;
- a first via extending vertically between the linear portion and the source/drain contact;
- and
- a second via extending vertically between the local interconnect portion and the gate structure.
Dependencies are inferred from the claim text.