Batch substrate processing for area selective deposition
AssigneeASM IP Holding B.V.
InventorDieter Pierreux
Life of this patent
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Abstract
The present invention relates to a substrate batch processing system, and to a method, for selectively forming a material on a first part of a surface of a substrate. The system comprises a first deposition module, comprising a first process chamber, for providing a passivation layer on said second part of the surface of the substrate, transfer apparatus configured for transferring, after formation of said passivation layer, the substrate from the first process chamber into a second process chamber and a second deposition module, comprising the second process chamber, for depositing the material on the first part of the surface of the substrate.
Claims17
A substrate batch processing system for selectively forming a material on a first part of a surface of a substrate, selectively with respect to a second part of the surface of the substrate, comprising:
- a first deposition module for providing a passivation layer on said second part of the surface of the substrate, comprising:
- a first process chamber for receiving the substrate,
- a first heater configured for heating and maintaining a first process temperature in the first process chamber,
- a first gas injector configured for providing, into the first process chamber, a first gas comprising a precursor for forming a passivation layer, and
- a first controller configured to cause the first deposition module to provide the passivation layer on the second part of the surface of the substrate, selectively with respect to the first part,
- transfer apparatus configured for transferring, after formation of said passivation layer, the substrate from the first process chamber into a second process chamber, and
- a second deposition module for depositing the material on the first part of the surface of the substrate, comprising:
- the second process chamber for receiving the substrate,
- a second heater configured for heating and maintaining a second process temperature in the second process chamber,
- a second gas injector configured for providing, into the second process chamber, a second gas comprising a precursor to the material, and
- a second controller configured to cause the second deposition module to form a layer of said material on the first part of the surface of the substrate, selectively with respect to the passivation layer on the second part.
A method for selectively forming a material on a first part of a surface of a substrate, selectively with respect to a second part of the surface of the substrate, comprising:
- providing, in a first process chamber, at a first process temperature, a passivation layer on said second part of the surface of the substrate, selectively with respect to the first part, then
- transferring the substrate from the first process chamber into a second process chamber, then
- depositing, in the second process chamber, at a second process temperature, a layer of the material on the first part of the surface of the substrate, selectively with respect to the passivation layer on the second part.
Dependencies are inferred from the claim text.