Method for processing semiconductor substrate

Abstract

Provided is a method for processing a semiconductor substrate, which method suppresses a change in the condition of the surface of the semiconductor substrate over a long period of time and additionally enables favorable processing of the semiconductor substrate without performing any particular treatment prior to the processing of the semiconductor substrate. The method for processing a semiconductor substrate includes: treating the surface of the semiconductor substrate by contacting the surface with a surface treatment liquid containing a silylating agent; drying the semiconductor substrate after the contact with the surface treatment liquid; and processing the semiconductor substrate after a lapse of 6 hours or more from the completion of the drying of the semiconductor substrate, in which a percentage change in water contact angle is 20% or less, in which the percentage change in the water contact angle is calculated from the contact angle CA1 of water on the surface of the semiconductor substrate before the contact with the surface treatment liquid and the contact angle CA2 of water on the surface of the semiconductor substrate at the time of the processing of the semiconductor substrate according to a predetermined equation.

Dependencies are inferred from the claim text.