Piezoelectric stack and piezoelectric stack manufacturing method

Abstract

There is provided a piezoelectric stack including: a substrate; a bottom electrode film on the substrate; and a piezoelectric film on the bottom electrode film, which is composed of a perovskite oxide represented by a general formula ABO3, in which A site contains K and Na and B site contains Nb, wherein measurement of a crystal orientation on an upper surface of the piezoelectric film by electron backscatter diffraction and calculation of an area rate of (001), (110), and (111) show that a percentage of a total area rate of the (110) and the (111) relative to a total area rate of the (001), the (110), and the (111) is more than 10% and 70% or less, an arithmetic mean roughness on the upper surface is 8 nm or less, and a root mean square roughness on the upper surface is 12 nm or less.

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