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US 2026/0305028 A1Published application
Semiconductor Device and Method of Making a Semiconductor Package with Graphene for Die Attach
AssigneeSTATS ChipPAC Pte. Ltd.
InventorsYongMoo Shin, HeeSoo Lee, SuJeong Kwon
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Abstract
A semiconductor device has a substrate with a die pad. A conductive material is disposed on the die pad. The conductive material includes a plurality of graphene-coated metal balls in a matrix. A semiconductor die is disposed on the conductive material. The conductive material is sintered using an infrared laser. A bond wire is formed between the semiconductor die and substrate. An encapsulant is deposited over the semiconductor die and bond wire.
Claims25
A semiconductor device, comprising:
- a substrate including a die pad;
- a conductive material disposed on the die pad, wherein the conductive material includes a plurality of graphene-coated metal balls in a matrix;
- a first semiconductor die disposed on the conductive material, wherein the graphene-coated metal balls are each interconnected as one graphene-coated metal ball of the plurality of graphene-coated metal balls physically contacts another graphene-coated metal ball of the plurality of graphene-coated metal balls within the conductive material to form a continuous thermal conduction path through the graphene-coated metal balls between the surface of the die pad and first semiconductor die;
- a bond wire formed between the first semiconductor die and substrate;
- and
- an encapsulant deposited over the first semiconductor die and bond wire.
3 more elements
A semiconductor device, comprising:
- a substrate;
- a conductive material disposed over the substrate, wherein the conductive material includes a plurality of graphene-coated metal balls;
- a first semiconductor die disposed over the conductive material, wherein the graphene-coated metal balls are each interconnected as one graphene-coated metal ball of the plurality of graphene-coated metal balls physically contacts another graphene-coated metal ball of the plurality of graphene-coated metal balls within the conductive material to form a continuous thermal conduction path through the graphene-coated metal balls between the substrate and first semiconductor die;
- and
- a bond wire formed between the first semiconductor die and substrate.
2 more elements
A semiconductor device, comprising:
- a substrate including a die pad;
- a conductive material disposed on the die pad, wherein the conductive material includes a plurality of graphene-coated metal balls in a matrix;
- a semiconductor die disposed on the conductive material, wherein the graphene-coated metal balls are each interconnected as one graphene-coated metal ball of the plurality of graphene-coated metal balls physically contacts another graphene-coated metal ball of the plurality of graphene-coated metal balls within the conductive material to form a continuous thermal conduction path through the graphene-coated metal balls between the surface of the die pad and semiconductor die;
- and
- an encapsulant deposited over the semiconductor die.
2 more elements
A semiconductor device, comprising:
- a substrate;
- a conductive material disposed over the substrate, wherein the conductive material includes a plurality of graphene-coated metal balls;
- and
- a first semiconductor die disposed over the conductive material, wherein the graphene-coated metal balls are each interconnected as one graphene-coated metal ball of the plurality of graphene-coated metal balls physically contacts another graphene-coated metal ball of the plurality of graphene-coated metal balls within the conductive material to form a continuous thermal conduction path through the graphene-coated metal balls between the substrate and first semiconductor die.
1 more element
Dependencies are inferred from the claim text.