Epitaxial Structure, Semiconductor Device and Manufacturing Method Thereof
AssigneeXiamen Changelight Co., Ltd.
InventorsZhiheng XING, Zhao LIU, Chengdan SHI, Rongxin ZHU, Xiangjing ZHUO, Zhongbao LIN, Wei CHENG
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Abstract
An epitaxial structure, a semiconductor device and a manufacturing method thereof are provided. The epitaxial structure includes a substrate and an epitaxial stack disposed on the substrate. The epitaxial stack includes: a first insulating isolation layer, a channel layer, a barrier layer, a second insulating isolation layer, an N-type semiconductor layer, an active region, and a P-type semiconductor layer, sequentially stacked from bottom to top on the substrate.
Claims20
An epitaxial structure, comprising:
- a substrate;
- and
- an epitaxial stack disposed on the substrate, the epitaxial stack comprising:
- a first insulating isolation layer, a channel layer, a barrier layer, a second insulating isolation layer, an N-type semiconductor layer, an active region, and a P-type semiconductor layer, sequentially stacked from bottom to top on the substrate.
A semiconductor device, comprising:
- an epitaxial structure comprising:
- a substrate and an epitaxial stack disposed on the substrate,
- wherein the epitaxial stack comprises:
- a first insulating isolation layer, a channel layer, a barrier layer, a second insulating isolation layer, an N-type semiconductor layer, an active region, and a P-type semiconductor layer, sequentially stacked from bottom to top on the substrate.
A manufacturing method of a semiconductor device, comprising:
- forming an epitaxial stack on a substrate through a single epitaxial process,
- wherein the epitaxial stack comprises a first insulating isolation layer, a channel layer, a barrier layer, a second insulating isolation layer, an N-type semiconductor layer, an active region, and a P-type semiconductor layer sequentially stacked along a growth direction.
Dependencies are inferred from the claim text.