Photoelectric conversion device

A photoelectric conversion device comprising:

• a pixel provided on a semiconductor substrate and including a photoelectric conversion unit, a floating diffusion to which charge generated in the photoelectric conversion unit is transferred, an amplifier transistor that generates a signal according to a voltage of the floating diffusion, and a select transistor that controls an output of the signal;
• and
• an output line to which the signal from the pixel is output,
• wherein the photoelectric conversion unit includes a first semiconductor region of a first conductivity type for storing charge of a first polarity generated by photoelectric conversion,
• wherein the select transistor includes a second semiconductor region of the first conductivity type forming a node to which the output line is connected,
• wherein the pixel further includes a third semiconductor region of the first conductivity type configured to be capable of discharging charge of the first polarity,
• wherein the second semiconductor region is adjacent to the first semiconductor region with a first element isolation structure interposed therebetween, and is adjacent to the third semiconductor region with a second element isolation structure interposed therebetween, and
• wherein a potential barrier for the charge of the first polarity of the first element isolation structure between the first semiconductor region and the second semiconductor region is higher than a potential barrier for the charge of the first polarity of the second element isolation structure between the second semiconductor region and the third semiconductor region.