Image sensing device
AssigneeSK hynix Inc.
InventorHyun Soo LIM
Life of this patent
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Abstract
An image sensing device including a floating diffusion region is disclosed. The image sensing device includes a semiconductor substrate; a photoelectric conversion element disposed in the semiconductor substrate, and configured to generate photocharges in response to incident light; a body region formed in the semiconductor substrate and configured to surround the photoelectric conversion element; and a floating diffusion region formed in the semiconductor substrate adjacent to the photoelectric conversion element to receive and store the photocharges generated by the photoelectric conversion element, the floating diffusion region structured to include a silicide region that is recessed into the semiconductor substrate and includes a side surface and a bottom surface that are in contact with the body region.
Claims18
An image sensing device, comprising:
- a semiconductor substrate;
- a photoelectric conversion element disposed in the semiconductor substrate, and configured to generate photocharges in response to incident light;
- a body region formed in the semiconductor substrate and configured to surround the photoelectric conversion element;
- and
- a floating diffusion region formed in the semiconductor substrate adjacent to the photoelectric conversion element to receive and store the photocharges generated by the photoelectric conversion element, the floating diffusion region structured to include a silicide region that is recessed into the semiconductor substrate and includes a side surface and a bottom surface that are in contact with the body region.
An image sensing device, comprising:
- first to fourth photoelectric conversion elements disposed in a semiconductor substrate to be spaced apart from each other, each of the first to fourth photoelectric conversion elements configured to generate photocharges in response to incident light;
- a body region surrounding each of the first to fourth photoelectric conversion elements;
- and
- a floating diffusion region including a silicide region recessed into the semiconductor substrate and configured to store photocharges generated by the first photoelectric conversion element,
- wherein
- the silicide region is arranged along a top surface, a side surface, and a bottom surface of the floating diffusion region.
Dependencies are inferred from the claim text.